型号:

NSS12600CF8T1G

RoHS:无铅 / 符合
制造商:ON Semiconductor描述:TRANSISTOR PNP 6A 12V CHIPFET
详细参数
数值
产品分类 分离式半导体产品 >> 晶体管(BJT) - 单路
NSS12600CF8T1G PDF
产品变化通告 LTB Notification
标准包装 3,000
系列 -
晶体管类型 PNP
电流 - 集电极 (Ic)(最大) 5A
电压 - 集电极发射极击穿(最大) 12V
Ib、Ic条件下的Vce饱和度(最大) 170mV @ 400mA,4A
电流 - 集电极截止(最大) -
在某 Ic、Vce 时的最小直流电流增益 (hFE) 250 @ 1A,2V
功率 - 最大 830mW
频率 - 转换 100MHz
安装类型 表面贴装
封装/外壳 8-SMD,扁平引线
供应商设备封装 ChipFET?
包装 带卷 (TR)
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